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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N6836 DESCRIPTION *With TO-3 package *High voltage ,high speed APPLICATIONS *Switching regulators *Inverters *Motor controls *Deflection circuits PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 850 450 6 15 20 10 15 175 200 -65~200 UNIT V V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.0 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2N6836 SYMBOL MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0 450 V VCEsat-1 Collector-emitter saturation voltage IC=5A; IB=0.7A IC=10A; IB=1.0A TC=100 IC=10A; IB=1.0A TC=100 VCE=850V; VBE=-1.5V TC=100 VEB=6V; IC=0 1.2 2.5 3.0 1.5 1.5 0.25 1.5 1.0 V VCEsat-2 Collector-emitter saturation voltage V VBEsat Base-emitter saturation voltage V ICEV Collector cut-off current mA IEBO Emitter cut-off current mA hFE-1 DC current gain IC=10A ; VCE=5V 8 30 hFE-2 DC current gain IC=15A ; VCE=5V 5 COB Output capacitance IE=0 ; VCB=10V;f=1MHz 50 400 pF fT Transition frequency IC=0.25A ; VCE=10V;f=10MHz 10 75 MHz 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6836 Fig.2 outline dimensions (unindicated tolerance:0.1mm) 3 |
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